Fast anodization fabrication of AAO and barrier perforation process on ITO glass

Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has bee...

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Detalles Bibliográficos
Autores principales: Liu, Sida, Xiong, Zuzhou, Zhu, Changqing, Li, Ma, Zheng, Maojun, Shen, Wenzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4003523/
https://www.ncbi.nlm.nih.gov/pubmed/24708829
http://dx.doi.org/10.1186/1556-276X-9-159
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author Liu, Sida
Xiong, Zuzhou
Zhu, Changqing
Li, Ma
Zheng, Maojun
Shen, Wenzhong
author_facet Liu, Sida
Xiong, Zuzhou
Zhu, Changqing
Li, Ma
Zheng, Maojun
Shen, Wenzhong
author_sort Liu, Sida
collection PubMed
description Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates.
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spelling pubmed-40035232014-05-01 Fast anodization fabrication of AAO and barrier perforation process on ITO glass Liu, Sida Xiong, Zuzhou Zhu, Changqing Li, Ma Zheng, Maojun Shen, Wenzhong Nanoscale Res Lett Nano Express Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates. Springer 2014-04-03 /pmc/articles/PMC4003523/ /pubmed/24708829 http://dx.doi.org/10.1186/1556-276X-9-159 Text en Copyright © 2014 Liu et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Liu, Sida
Xiong, Zuzhou
Zhu, Changqing
Li, Ma
Zheng, Maojun
Shen, Wenzhong
Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title_full Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title_fullStr Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title_full_unstemmed Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title_short Fast anodization fabrication of AAO and barrier perforation process on ITO glass
title_sort fast anodization fabrication of aao and barrier perforation process on ito glass
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4003523/
https://www.ncbi.nlm.nih.gov/pubmed/24708829
http://dx.doi.org/10.1186/1556-276X-9-159
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