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Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates

Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) fr...

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Detalles Bibliográficos
Autores principales: Basu, Tanmoy, Kumar, Mohit, Sahoo, Pratap Kumar, Kanjilal, Aloke, Som, Tapobrata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4005829/
https://www.ncbi.nlm.nih.gov/pubmed/24808799
http://dx.doi.org/10.1186/1556-276X-9-192
Descripción
Sumario:Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance. PACS: 81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd