Fabrication of Thin-Film LAPS with Amorphous Silicon

To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous...

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Detalles Bibliográficos
Autores principales: Yoshinobu, Tatsuo, Schöning, Michael J., Finger, Friedhelm, Moritz, Werner, Iwasaki, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2004
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4008868/
http://dx.doi.org/10.3390/s041000163
Descripción
Sumario:To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics and pH sensitivity of the fabricated a-Si LAPS were investigated.

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