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Quantum strain sensor with a topological insulator HgTe quantum dot
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The pre...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4014981/ https://www.ncbi.nlm.nih.gov/pubmed/24811674 http://dx.doi.org/10.1038/srep04903 |