Probing the Role of an Atomically Thin SiN(x) Interlayer on the Structure of Ultrathin Carbon Films

Filtered cathodic vacuum arc (FCVA) processed carbon films are being considered as a promising protective media overcoat material for future hard disk drives (HDDs). However, at ultrathin film levels, FCVA-deposited carbon films show a dramatic change in their structure in terms of loss of sp(3) bonding, density, wear resistance etc., compared to their bulk counterpart. We report for the first time how an atomically thin (0.4 nm) silicon nitride (SiN(x)) interlayer helps in maintaining/improving the sp(3) carbon bonding, enhancing interfacial strength/bonding, improving oxidation/corrosion resistance, and strengthening the tribological properties of FCVA-deposited carbon films, even at ultrathin levels (1.2 nm). We propose the role of the SiN(x) interlayer in preventing the catalytic activity of Co and Pt in media, leading to enhanced sp(3)C bonding (relative enhancement ~40%). These findings are extremely important in view of the atomic level understanding of structural modification and the development of high density HDDs.