Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is...

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Detalles Bibliográficos
Autores principales: Tseng, Jian-Zhi, Wu, Chyan-Chyi, Dai, Ching-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4029674/
https://www.ncbi.nlm.nih.gov/pubmed/24732100
http://dx.doi.org/10.3390/s140406722
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author Tseng, Jian-Zhi
Wu, Chyan-Chyi
Dai, Ching-Liang
author_facet Tseng, Jian-Zhi
Wu, Chyan-Chyi
Dai, Ching-Liang
author_sort Tseng, Jian-Zhi
collection PubMed
description The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
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spelling pubmed-40296742014-05-22 Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process Tseng, Jian-Zhi Wu, Chyan-Chyi Dai, Ching-Liang Sensors (Basel) Article The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA. MDPI 2014-04-11 /pmc/articles/PMC4029674/ /pubmed/24732100 http://dx.doi.org/10.3390/s140406722 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Tseng, Jian-Zhi
Wu, Chyan-Chyi
Dai, Ching-Liang
Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title_full Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title_fullStr Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title_full_unstemmed Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title_short Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
title_sort modeling and manufacturing of a micromachined magnetic sensor using the cmos process without any post-process
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4029674/
https://www.ncbi.nlm.nih.gov/pubmed/24732100
http://dx.doi.org/10.3390/s140406722
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AT daichingliang modelingandmanufacturingofamicromachinedmagneticsensorusingthecmosprocesswithoutanypostprocess

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