Transistor application of alkyl-substituted picene

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C(14)H(29))(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C(14)H(29))(2) thin-film FET with PbZr(0.52)Ti(0.48)O(3) (PZT) gate dielectric reached ~21 cm(2) V(−1) s(−1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm(2) V(−1) s(−1). The <μ> values for picene-(C(14)H(29))(2) thin-film FETs with other gate dielectrics such as SiO(2), Ta(2)O(5), ZrO(2) and HfO(2) were greater than 5 cm(2) V(−1) s(−1), and the lowest absolute threshold voltage, |V(th)|, (5.2 V) was recorded with a PZT gate dielectric; the average |V(th)| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C(14)H(29))(2) FET was also fabricated with an SiO(2) gate dielectric, yielding μ = 3.4 × 10(−2) cm(2) V(−1) s(−1). These results verify the effectiveness of picene-(C(14)H(29))(2) for electronics applications.