Transistor application of alkyl-substituted picene

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C(14)H(29))(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a p...

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Detalles Bibliográficos
Autores principales: Okamoto, Hideki, Hamao, Shino, Goto, Hidenori, Sakai, Yusuke, Izumi, Masanari, Gohda, Shin, Kubozono, Yoshihiro, Eguchi, Ritsuko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4031476/
https://www.ncbi.nlm.nih.gov/pubmed/24854436
http://dx.doi.org/10.1038/srep05048

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4031476/
https://www.ncbi.nlm.nih.gov/pubmed/24854436
http://dx.doi.org/10.1038/srep05048

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