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Electrically and Optically Readable Light Emitting Memories
Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory perfor...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4044638/ https://www.ncbi.nlm.nih.gov/pubmed/24894723 http://dx.doi.org/10.1038/srep05121 |
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author | Chang, Che-Wei Tan, Wei-Chun Lu, Meng-Lin Pan, Tai-Chun Yang, Ying-Jay Chen, Yang-Fang |
author_facet | Chang, Che-Wei Tan, Wei-Chun Lu, Meng-Lin Pan, Tai-Chun Yang, Ying-Jay Chen, Yang-Fang |
author_sort | Chang, Che-Wei |
collection | PubMed |
description | Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO(2) as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. |
format | Online Article Text |
id | pubmed-4044638 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-40446382014-06-12 Electrically and Optically Readable Light Emitting Memories Chang, Che-Wei Tan, Wei-Chun Lu, Meng-Lin Pan, Tai-Chun Yang, Ying-Jay Chen, Yang-Fang Sci Rep Article Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO(2) as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. Nature Publishing Group 2014-06-04 /pmc/articles/PMC4044638/ /pubmed/24894723 http://dx.doi.org/10.1038/srep05121 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported license. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/ |
spellingShingle | Article Chang, Che-Wei Tan, Wei-Chun Lu, Meng-Lin Pan, Tai-Chun Yang, Ying-Jay Chen, Yang-Fang Electrically and Optically Readable Light Emitting Memories |
title | Electrically and Optically Readable Light Emitting Memories |
title_full | Electrically and Optically Readable Light Emitting Memories |
title_fullStr | Electrically and Optically Readable Light Emitting Memories |
title_full_unstemmed | Electrically and Optically Readable Light Emitting Memories |
title_short | Electrically and Optically Readable Light Emitting Memories |
title_sort | electrically and optically readable light emitting memories |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4044638/ https://www.ncbi.nlm.nih.gov/pubmed/24894723 http://dx.doi.org/10.1038/srep05121 |
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