Optical excitation and external photoluminescence quantum efficiency of Eu(3+) in GaN

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y(2)O(3), we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the or...

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Detalles Bibliográficos
Autores principales: de Boer, W. D. A. M., McGonigle, C., Gregorkiewicz, T., Fujiwara, Y., Tanabe, S., Stallinga, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4050378/
https://www.ncbi.nlm.nih.gov/pubmed/24913315
http://dx.doi.org/10.1038/srep05235
Descripción
Sumario:We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y(2)O(3), we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively.

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