Cargando…
Optical excitation and external photoluminescence quantum efficiency of Eu(3+) in GaN
We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y(2)O(3), we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the or...
Autores principales: | de Boer, W. D. A. M., McGonigle, C., Gregorkiewicz, T., Fujiwara, Y., Tanabe, S., Stallinga, P. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4050378/ https://www.ncbi.nlm.nih.gov/pubmed/24913315 http://dx.doi.org/10.1038/srep05235 |
Ejemplares similares
-
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
por: Ho, V. X., et al.
Publicado: (2017) -
Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD
por: Lesage, A., et al.
Publicado: (2019) -
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018) -
Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017) -
Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
por: Peres, Marco, et al.
Publicado: (2011)