Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...

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Detalles Bibliográficos
Autores principales: Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/
https://www.ncbi.nlm.nih.gov/pubmed/24886761
http://dx.doi.org/10.1038/ncomms4990
Descripción
Sumario:Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO(3) junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.

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