Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...

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Autores principales: Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/
https://www.ncbi.nlm.nih.gov/pubmed/24886761
http://dx.doi.org/10.1038/ncomms4990
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author Mikheev, Evgeny
Hoskins, Brian D.
Strukov, Dmitri B.
Stemmer, Susanne
author_facet Mikheev, Evgeny
Hoskins, Brian D.
Strukov, Dmitri B.
Stemmer, Susanne
author_sort Mikheev, Evgeny
collection PubMed
description Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO(3) junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.
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spelling pubmed-40599282014-06-18 Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions Mikheev, Evgeny Hoskins, Brian D. Strukov, Dmitri B. Stemmer, Susanne Nat Commun Article Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO(3) junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices. Nature Pub. Group 2014-06-02 /pmc/articles/PMC4059928/ /pubmed/24886761 http://dx.doi.org/10.1038/ncomms4990 Text en Copyright © 2014, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by-nc-by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Mikheev, Evgeny
Hoskins, Brian D.
Strukov, Dmitri B.
Stemmer, Susanne
Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title_full Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title_fullStr Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title_full_unstemmed Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title_short Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
title_sort resistive switching and its suppression in pt/nb:srtio(3) junctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/
https://www.ncbi.nlm.nih.gov/pubmed/24886761
http://dx.doi.org/10.1038/ncomms4990
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