Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...

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Detalles Bibliográficos
Autores principales: Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/
https://www.ncbi.nlm.nih.gov/pubmed/24886761
http://dx.doi.org/10.1038/ncomms4990

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/
https://www.ncbi.nlm.nih.gov/pubmed/24886761
http://dx.doi.org/10.1038/ncomms4990

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