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Resistive switching and its suppression in Pt/Nb:SrTiO(3) junctions
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintention...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Pub. Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059928/ https://www.ncbi.nlm.nih.gov/pubmed/24886761 http://dx.doi.org/10.1038/ncomms4990 |