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Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers

BACKGROUND: The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly...

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Autores principales: Choi, Hojong, Shung, K Kirk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: BioMed Central 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4068076/
https://www.ncbi.nlm.nih.gov/pubmed/24924595
http://dx.doi.org/10.1186/1475-925X-13-76
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author Choi, Hojong
Shung, K Kirk
author_facet Choi, Hojong
Shung, K Kirk
author_sort Choi, Hojong
collection PubMed
description BACKGROUND: The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. METHODS: The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. RESULTS: We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. CONCLUSIONS: The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.
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spelling pubmed-40680762014-06-27 Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers Choi, Hojong Shung, K Kirk Biomed Eng Online Research BACKGROUND: The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. METHODS: The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. RESULTS: We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. CONCLUSIONS: The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications. BioMed Central 2014-06-12 /pmc/articles/PMC4068076/ /pubmed/24924595 http://dx.doi.org/10.1186/1475-925X-13-76 Text en Copyright © 2014 Choi and Shung; licensee BioMed Central Ltd. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. The Creative Commons Public Domain Dedication waiver (http://creativecommons.org/publicdomain/zero/1.0/) applies to the data made available in this article, unless otherwise stated.
spellingShingle Research
Choi, Hojong
Shung, K Kirk
Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title_full Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title_fullStr Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title_full_unstemmed Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title_short Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
title_sort crossed smps mosfet-based protection circuit for high frequency ultrasound transceivers and transducers
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4068076/
https://www.ncbi.nlm.nih.gov/pubmed/24924595
http://dx.doi.org/10.1186/1475-925X-13-76
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