InPBi Single Crystals Grown by Molecular Beam Epitaxy

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular...

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Autores principales: Wang, K., Gu, Y., Zhou, H. F., Zhang, L. Y., Kang, C. Z., Wu, M. J., Pan, W. W., Lu, P. F., Gong, Q., Wang, S. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4071318/
https://www.ncbi.nlm.nih.gov/pubmed/24965260
http://dx.doi.org/10.1038/srep05449
_version_ 1782322798156316672
author Wang, K.
Gu, Y.
Zhou, H. F.
Zhang, L. Y.
Kang, C. Z.
Wu, M. J.
Pan, W. W.
Lu, P. F.
Gong, Q.
Wang, S. M.
author_facet Wang, K.
Gu, Y.
Zhou, H. F.
Zhang, L. Y.
Kang, C. Z.
Wu, M. J.
Pan, W. W.
Lu, P. F.
Gong, Q.
Wang, S. M.
author_sort Wang, K.
collection PubMed
description InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory.
format Online
Article
Text
id pubmed-4071318
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-40713182014-06-27 InPBi Single Crystals Grown by Molecular Beam Epitaxy Wang, K. Gu, Y. Zhou, H. F. Zhang, L. Y. Kang, C. Z. Wu, M. J. Pan, W. W. Lu, P. F. Gong, Q. Wang, S. M. Sci Rep Article InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory. Nature Publishing Group 2014-06-26 /pmc/articles/PMC4071318/ /pubmed/24965260 http://dx.doi.org/10.1038/srep05449 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
spellingShingle Article
Wang, K.
Gu, Y.
Zhou, H. F.
Zhang, L. Y.
Kang, C. Z.
Wu, M. J.
Pan, W. W.
Lu, P. F.
Gong, Q.
Wang, S. M.
InPBi Single Crystals Grown by Molecular Beam Epitaxy
title InPBi Single Crystals Grown by Molecular Beam Epitaxy
title_full InPBi Single Crystals Grown by Molecular Beam Epitaxy
title_fullStr InPBi Single Crystals Grown by Molecular Beam Epitaxy
title_full_unstemmed InPBi Single Crystals Grown by Molecular Beam Epitaxy
title_short InPBi Single Crystals Grown by Molecular Beam Epitaxy
title_sort inpbi single crystals grown by molecular beam epitaxy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4071318/
https://www.ncbi.nlm.nih.gov/pubmed/24965260
http://dx.doi.org/10.1038/srep05449
work_keys_str_mv AT wangk inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT guy inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT zhouhf inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT zhangly inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT kangcz inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT wumj inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT panww inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT lupf inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT gongq inpbisinglecrystalsgrownbymolecularbeamepitaxy
AT wangsm inpbisinglecrystalsgrownbymolecularbeamepitaxy

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