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Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4074793/ https://www.ncbi.nlm.nih.gov/pubmed/24975226 http://dx.doi.org/10.1038/srep05497 |
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author | Li, Xufan Lin, Ming-Wei Puretzky, Alexander A. Idrobo, Juan C. Ma, Cheng Chi, Miaofang Yoon, Mina Rouleau, Christopher M. Kravchenko, Ivan I. Geohegan, David B. Xiao, Kai |
author_facet | Li, Xufan Lin, Ming-Wei Puretzky, Alexander A. Idrobo, Juan C. Ma, Cheng Chi, Miaofang Yoon, Mina Rouleau, Christopher M. Kravchenko, Ivan I. Geohegan, David B. Xiao, Kai |
author_sort | Li, Xufan |
collection | PubMed |
description | Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO(2)/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors. |
format | Online Article Text |
id | pubmed-4074793 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-40747932014-07-01 Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse Li, Xufan Lin, Ming-Wei Puretzky, Alexander A. Idrobo, Juan C. Ma, Cheng Chi, Miaofang Yoon, Mina Rouleau, Christopher M. Kravchenko, Ivan I. Geohegan, David B. Xiao, Kai Sci Rep Article Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO(2)/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors. Nature Publishing Group 2014-06-30 /pmc/articles/PMC4074793/ /pubmed/24975226 http://dx.doi.org/10.1038/srep05497 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Li, Xufan Lin, Ming-Wei Puretzky, Alexander A. Idrobo, Juan C. Ma, Cheng Chi, Miaofang Yoon, Mina Rouleau, Christopher M. Kravchenko, Ivan I. Geohegan, David B. Xiao, Kai Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title | Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title_full | Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title_fullStr | Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title_full_unstemmed | Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title_short | Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse |
title_sort | controlled vapor phase growth of single crystalline, two-dimensional gase crystals with high photoresponse |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4074793/ https://www.ncbi.nlm.nih.gov/pubmed/24975226 http://dx.doi.org/10.1038/srep05497 |
work_keys_str_mv | AT lixufan controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT linmingwei controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT puretzkyalexandera controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT idrobojuanc controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT macheng controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT chimiaofang controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT yoonmina controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT rouleauchristopherm controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT kravchenkoivani controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT geohegandavidb controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse AT xiaokai controlledvaporphasegrowthofsinglecrystallinetwodimensionalgasecrystalswithhighphotoresponse |