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Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synth...

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Detalles Bibliográficos
Autores principales: Baiutti, Federico, Christiani, Georg, Logvenov, Gennady
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4079053/
https://www.ncbi.nlm.nih.gov/pubmed/24995148
http://dx.doi.org/10.3762/bjnano.5.70
Descripción
Sumario:In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La(2)CuO(4) and insulator-to-metal La(2−)(x)Sr(x)NiO(4). We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.