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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequen...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4081891/ https://www.ncbi.nlm.nih.gov/pubmed/24993103 http://dx.doi.org/10.1038/srep05303 |
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author | Kraus, H. Soltamov, V. A. Fuchs, F. Simin, D. Sperlich, A. Baranov, P. G. Astakhov, G. V. Dyakonov, V. |
author_facet | Kraus, H. Soltamov, V. A. Fuchs, F. Simin, D. Sperlich, A. Baranov, P. G. Astakhov, G. V. Dyakonov, V. |
author_sort | Kraus, H. |
collection | PubMed |
description | Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response. |
format | Online Article Text |
id | pubmed-4081891 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-40818912014-07-09 Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide Kraus, H. Soltamov, V. A. Fuchs, F. Simin, D. Sperlich, A. Baranov, P. G. Astakhov, G. V. Dyakonov, V. Sci Rep Article Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response. Nature Publishing Group 2014-07-04 /pmc/articles/PMC4081891/ /pubmed/24993103 http://dx.doi.org/10.1038/srep05303 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/ |
spellingShingle | Article Kraus, H. Soltamov, V. A. Fuchs, F. Simin, D. Sperlich, A. Baranov, P. G. Astakhov, G. V. Dyakonov, V. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title | Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title_full | Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title_fullStr | Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title_full_unstemmed | Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title_short | Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
title_sort | magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4081891/ https://www.ncbi.nlm.nih.gov/pubmed/24993103 http://dx.doi.org/10.1038/srep05303 |
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