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Organic semiconductor density of states controls the energy level alignment at electrode interfaces
Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alig...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4090715/ https://www.ncbi.nlm.nih.gov/pubmed/24938867 http://dx.doi.org/10.1038/ncomms5174 |
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author | Oehzelt, Martin Koch, Norbert Heimel, Georg |
author_facet | Oehzelt, Martin Koch, Norbert Heimel, Georg |
author_sort | Oehzelt, Martin |
collection | PubMed |
description | Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alignment between the electrode Fermi energy and the transport states in the organic semiconductor both qualitatively and quantitatively. Covering the full phenomenological range of interfacial energy level alignment regimes within a single, consistent framework and continuously connecting the limiting cases described by previously proposed models allows us to resolve conflicting views in the literature. Our results highlight the density of states in the organic semiconductor as a key factor. Its shape and, in particular, the energy distribution of electronic states tailing into the fundamental gap is found to determine both the minimum value of practically achievable injection barriers as well as their spatial profile, ranging from abrupt interface dipoles to extended band-bending regions. |
format | Online Article Text |
id | pubmed-4090715 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Pub. Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-40907152014-07-11 Organic semiconductor density of states controls the energy level alignment at electrode interfaces Oehzelt, Martin Koch, Norbert Heimel, Georg Nat Commun Article Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alignment between the electrode Fermi energy and the transport states in the organic semiconductor both qualitatively and quantitatively. Covering the full phenomenological range of interfacial energy level alignment regimes within a single, consistent framework and continuously connecting the limiting cases described by previously proposed models allows us to resolve conflicting views in the literature. Our results highlight the density of states in the organic semiconductor as a key factor. Its shape and, in particular, the energy distribution of electronic states tailing into the fundamental gap is found to determine both the minimum value of practically achievable injection barriers as well as their spatial profile, ranging from abrupt interface dipoles to extended band-bending regions. Nature Pub. Group 2014-06-18 /pmc/articles/PMC4090715/ /pubmed/24938867 http://dx.doi.org/10.1038/ncomms5174 Text en Copyright © 2014, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/ |
spellingShingle | Article Oehzelt, Martin Koch, Norbert Heimel, Georg Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title | Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title_full | Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title_fullStr | Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title_full_unstemmed | Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title_short | Organic semiconductor density of states controls the energy level alignment at electrode interfaces |
title_sort | organic semiconductor density of states controls the energy level alignment at electrode interfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4090715/ https://www.ncbi.nlm.nih.gov/pubmed/24938867 http://dx.doi.org/10.1038/ncomms5174 |
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