IR Li(2)Ga(2)GeS(6) nanocrystallized GeS(2)-Ga(2)S(3)-Li(2)S electroconductive chalcogenide glass with good nonlinearity

GeS(2)-Ga(2)S(3)-Li(2)S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS(2)-Ga(2)S(3)-Li(2)S system was extended to the cation ratio of 0–20% Li...

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Detalles Bibliográficos
Autores principales: Liu, Qiming, Zhang, Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4101468/
https://www.ncbi.nlm.nih.gov/pubmed/25030713
http://dx.doi.org/10.1038/srep05719
Descripción
Sumario:GeS(2)-Ga(2)S(3)-Li(2)S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS(2)-Ga(2)S(3)-Li(2)S system was extended to the cation ratio of 0–20% Li with around 40% Ga. GeS(2)-Ga(2)S(3)-Li(2)S glass-ceramics containing IR Li(2)Ga(2)GeS(6) nonlinear nanocrystals were obtained by the more carefully controlled heating rate. Its optical nonlinearity was investigated by the Maker fringe measurements, the maximum second harmonic intensity was observed to be 0.35 of the reference Z-cut quartz. IR Li(2)Ga(2)GeS(6) nonlinear crystals were directly obtained at the composition of 40GeS(2)-30GaS(1.5)-30LiS(0.5).

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