Cargando…

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti(0.4)Sb(2)Te(3) alloy, showing one order of magnitude faster Set operatio...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhu, Min, Xia, Mengjiao, Rao, Feng, Li, Xianbin, Wu, Liangcai, Ji, Xinglong, Lv, Shilong, Song, Zhitang, Feng, Songlin, Sun, Hongbo, Zhang, Shengbai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Pub. Group 2014
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4102114/ https://www.ncbi.nlm.nih.gov/pubmed/25001009 http://dx.doi.org/10.1038/ncomms5086

Ejemplares similares

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties
por: Xia, Mengjiao, et al.
Publicado: (2015)

Low-Energy Amorphization of Ti(1)Sb(2)Te(5) Phase Change Alloy Induced by TiTe(2) Nano-Lamellae
por: Ding, Keyuan, et al.
Publicado: (2016)

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
por: Song, Sannian, et al.
Publicado: (2015)

Enhanced Crystallization Behaviors of Silicon-Doped Sb(2)Te Films: Optical Evidences
por: Guo, Shuang, et al.
Publicado: (2016)

Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer
por: Song, Sannian, et al.
Publicado: (2013)

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge(2)Sb(2)Te(5) Thin Film
por: Zheng, Yonghui, et al.
Publicado: (2017)

Ta-Doped Sb(2)Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
por: Xue, Yuan, et al.
Publicado: (2021)

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb(2)Te(3)
por: Zhang, Jie, et al.
Publicado: (2023)

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3)
por: Wang, Xue‐Peng, et al.
Publicado: (2021)

Atomic scale insight into the effects of Aluminum doped Sb(2)Te for phase change memory application
por: Wang, Yong, et al.
Publicado: (2018)

Advantages of Ta-Doped Sb(3)Te(1) Materials for Phase Change Memory Applications
por: Shao, Mingyue, et al.
Publicado: (2023)

Pt Modified Sb(2)Te(3) Alloy Ensuring High−Performance Phase Change Memory
por: Qiao, Yang, et al.
Publicado: (2022)

An Order of Magnitude Faster AIP1-Associated Actin Disruption than Nucleation by the Arp2/3 Complex in Lamellipodia
por: Tsuji, Takahiro, et al.
Publicado: (2009)

Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material
por: Rao, Feng, et al.
Publicado: (2015)

Interface Analysis of MOCVD Grown GeTe/Sb(2)Te(3) and Ge-Rich Ge-Sb-Te/Sb(2)Te(3) Core-Shell Nanowires
por: Kumar, Arun, et al.
Publicado: (2022)

Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016)

Effects of Intermixing in Sb(2)Te(3)/Ge(1+x)Te Multilayers on the Thermoelectric Power Factor
por: Zhang, Heng, et al.
Publicado: (2023)

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016)

Scandium doping brings speed improvement in Sb(2)Te alloy for phase change random access memory application
por: Chen, Xin, et al.
Publicado: (2018)

Is Order the Defining Feature of Magnitude Representation? An ERP Study on Learning Numerical Magnitude and Spatial Order of Artificial Symbols
por: Zhao, Hui, et al.
Publicado: (2012)

Controllable crystal growth and fast reversible crystallization-to-amorphization in Sb(2)Te-TiO(2) films
por: Wang, Guoxiang, et al.
Publicado: (2017)

Thickness Dependence of Thermoelectric Properties and Maximum Output Power of Single Planar Sb(2)Te(3) Films
por: Junlabhut, Prasopporn, et al.
Publicado: (2022)

Titanium germanium antimonide, TiGeSb
por: Lam, Robert, et al.
Publicado: (2009)

Implementation of Clinical Diagnostic Criteria and Universal Symptom Survey Contributed to Lower Magnitude and Faster Resolution of the COVID-19 Epidemic in Wuhan
por: Wei, Yongyue, et al.
Publicado: (2020)

Approaching high-performance of ordered structure Sb(2)Te(3) film via unique angular intraplanar grain boundaries
por: Tan, Ming, et al.
Publicado: (2020)

Artificial Synapse Consisted of TiSbTe/SiC(x):H Memristor with Ultra-high Uniformity for Neuromorphic Computing
por: Chen, Liangliang, et al.
Publicado: (2022)

On the order of magnitude of 8th order corrections to the anomalous magnetic moment of the muon
por: Lautrup, B
Publicado: (1972)

High zT and Its Origin in Sb‐doped GeTe Single Crystals
por: Vankayala, Ranganayakulu K., et al.
Publicado: (2020)

Drastic power factor improvement by Te doping of rare earth-free CoSb(3)-skutterudite thin films
por: Bourgès, Cédric, et al.
Publicado: (2020)

Faster Than the Speed of Light, More Powerful Than…
por: Zimmerman, Karen G., et al.
Publicado: (2020)

Orders of Magnitude Change in Phenotype Rate Caused by Mutation
por: Ao, Ping
Publicado: (2007)

Orders of Magnitude Change in Phenotype Rate Caused by Mutation
por: Duesberg, Peter, et al.
Publicado: (2007)

Antimonene with two-orders-of-magnitude improved stability for high-performance cancer theranostics
por: Lu, Guihong, et al.
Publicado: (2019)

Phase Change Ge-Rich Ge–Sb–Te/Sb(2)Te(3) Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
por: Kumar, Arun, et al.
Publicado: (2021)

Emergent and Tunable Topological Surface States in Complementary Sb/Bi(2)Te(3) and Bi(2)Te(3)/Sb Thin-Film Heterostructures
por: Li, Yao, et al.
Publicado: (2022)

The Magnetic Susceptibility Bifurcation in the Ni-Doped Sb(2)Te(3) Topological Insulator with Antiferromagnetic Order Accompanied by Weak Ferromagnetic Alignment
por: Huang, Shiu-Ming, et al.
Publicado: (2021)

Giant multiferroic effects in topological GeTe-Sb(2)Te(3) superlattices
por: Tominaga, Junji, et al.
Publicado: (2015)

Topological states and phase transitions in Sb(2)Te(3)-GeTe multilayers
por: Nguyen, Thuy-Anh, et al.
Publicado: (2016)

Tunable unconventional kagome superconductivity in charge ordered RbV(3)Sb(5) and KV(3)Sb(5)
por: Guguchia, Z., et al.
Publicado: (2023)

Modeling of switching mechanism in GeSbTe chalcogenide superlattices
por: Yu, Xiaoming, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_fojleqk84t0ie57di2n7mdli58