Microstructural analysis and Transport Properties of MoO and MoC nanostructures prepared by focused electron beam-induced deposition

By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoO(x)) and molybdenum carbide (MoC) on a SiO(2) substrate set in a scanning electron microscope. In order to prepare MoO(x) specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)(6)] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H(2)O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoO(x) nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity ρ of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T ≈ 10 K and decreases to ≈ 0 with decreasing temperature. This behavior of ρ(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of ρ(T) below the superconducting transition temperature T(c) ≈ 4 K can be well explained by the quantum phase-slip model with a coherence length ξ(0) ≈ 8 nm at T = 0.