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Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K
We report on experimental results of the thermal conductivity k of highly porous Si in the temperature range 4.2 to 20 K, obtained using the direct current (dc) method combined with thermal finite element simulations. The reported results are the first in the literature for this temperature range. I...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4109793/ https://www.ncbi.nlm.nih.gov/pubmed/25114631 http://dx.doi.org/10.1186/1556-276X-9-318 |