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The Design, Fabrication and Characterization of a Transparent Atom Chip
This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reser...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4118404/ https://www.ncbi.nlm.nih.gov/pubmed/24922456 http://dx.doi.org/10.3390/s140610292 |
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author | Chuang, Ho-Chiao Huang, Chia-Shiuan Chen, Hung-Pin Huang, Chi-Sheng Lin, Yu-Hsin |
author_facet | Chuang, Ho-Chiao Huang, Chia-Shiuan Chen, Hung-Pin Huang, Chi-Sheng Lin, Yu-Hsin |
author_sort | Chuang, Ho-Chiao |
collection | PubMed |
description | This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments. |
format | Online Article Text |
id | pubmed-4118404 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-41184042014-08-01 The Design, Fabrication and Characterization of a Transparent Atom Chip Chuang, Ho-Chiao Huang, Chia-Shiuan Chen, Hung-Pin Huang, Chi-Sheng Lin, Yu-Hsin Sensors (Basel) Article This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments. MDPI 2014-06-11 /pmc/articles/PMC4118404/ /pubmed/24922456 http://dx.doi.org/10.3390/s140610292 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Chuang, Ho-Chiao Huang, Chia-Shiuan Chen, Hung-Pin Huang, Chi-Sheng Lin, Yu-Hsin The Design, Fabrication and Characterization of a Transparent Atom Chip |
title | The Design, Fabrication and Characterization of a Transparent Atom Chip |
title_full | The Design, Fabrication and Characterization of a Transparent Atom Chip |
title_fullStr | The Design, Fabrication and Characterization of a Transparent Atom Chip |
title_full_unstemmed | The Design, Fabrication and Characterization of a Transparent Atom Chip |
title_short | The Design, Fabrication and Characterization of a Transparent Atom Chip |
title_sort | design, fabrication and characterization of a transparent atom chip |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4118404/ https://www.ncbi.nlm.nih.gov/pubmed/24922456 http://dx.doi.org/10.3390/s140610292 |
work_keys_str_mv | AT chuanghochiao thedesignfabricationandcharacterizationofatransparentatomchip AT huangchiashiuan thedesignfabricationandcharacterizationofatransparentatomchip AT chenhungpin thedesignfabricationandcharacterizationofatransparentatomchip AT huangchisheng thedesignfabricationandcharacterizationofatransparentatomchip AT linyuhsin thedesignfabricationandcharacterizationofatransparentatomchip AT chuanghochiao designfabricationandcharacterizationofatransparentatomchip AT huangchiashiuan designfabricationandcharacterizationofatransparentatomchip AT chenhungpin designfabricationandcharacterizationofatransparentatomchip AT huangchisheng designfabricationandcharacterizationofatransparentatomchip AT linyuhsin designfabricationandcharacterizationofatransparentatomchip |