Cargando…

Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array

Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO(2) cone a...

Descripción completa

Detalles Bibliográficos
Autores principales:	Huang, Huamao, Hu, Jinyong, Wang, Hong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Hindawi Publishing Corporation 2014
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4124249/ https://www.ncbi.nlm.nih.gov/pubmed/25133262 http://dx.doi.org/10.1155/2014/837586

Ejemplares similares

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022)

Stable and efficient transfer-printing including repair using a GaN-based microscale light-emitting diode array for deformable displays
por: Park, Jun-Beom, et al.
Publicado: (2019)

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector
por: Lee, Hyung-Joo, et al.
Publicado: (2022)

Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes
por: Zhou, Shengjun, et al.
Publicado: (2018)

Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources
por: Weng, Yalian, et al.
Publicado: (2022)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
por: Piprek, Joachim
Publicado: (2020)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
por: Nee, Tzer-En, et al.
Publicado: (2021)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017)

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
por: Chen, Shuo-Wei, et al.
Publicado: (2017)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
por: Li, Jianfei, et al.
Publicado: (2021)

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer
por: Dong, Jing-Jing, et al.
Publicado: (2014)

Modelling of proton irradiated GaN-based high-power white light-emitting diodes
por: Floriduz, Alessandro, et al.
Publicado: (2018)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
por: Hsu, Kai-Chiang, et al.
Publicado: (2015)

Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
por: Jeong, Junseok, et al.
Publicado: (2020)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
por: Bae, Junho, et al.
Publicado: (2022)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
por: Tanaka, Atsunori, et al.
Publicado: (2015)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
por: Dvoretckaia, Liliia, et al.
Publicado: (2022)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres
por: Kim, Jonghak, et al.
Publicado: (2013)

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
por: Zhao, Qiang, et al.
Publicado: (2019)

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors
por: Chen, Kuei-Ting, et al.
Publicado: (2023)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

Light interaction in sapphire/MgF(2)/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes
por: Lee, Keon Hwa, et al.
Publicado: (2015)

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
por: van Treeck, David, et al.
Publicado: (2019)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_3pobsjpc8qs95bq932363vk4d4