Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions

Recently, two-dimensional materials such as molybdenum disulphide (MoS(2)) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS(2) FET is rather low (typically 0.5–20 cm(2)/V·s). Here, we report a novel fiel...

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Detalles Bibliográficos
Autores principales: Tian, He, Tan, Zhen, Wu, Can, Wang, Xiaomu, Mohammad, Mohammad Ali, Xie, Dan, Yang, Yi, Wang, Jing, Li, Lain-Jong, Xu, Jun, Ren, Tian-Ling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4127518/
https://www.ncbi.nlm.nih.gov/pubmed/25109609
http://dx.doi.org/10.1038/srep05951

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4127518/
https://www.ncbi.nlm.nih.gov/pubmed/25109609
http://dx.doi.org/10.1038/srep05951

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