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Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime
The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier Science
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4130135/ https://www.ncbi.nlm.nih.gov/pubmed/25132811 http://dx.doi.org/10.1016/j.orgel.2013.02.009 |
_version_ | 1782330294489055232 |
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author | Bednorz, Mateusz Matt, Gebhard J. Głowacki, Eric D. Fromherz, Thomas Brabec, Christoph J. Scharber, Markus C. Sitter, Helmut Sariciftci, N. Serdar |
author_facet | Bednorz, Mateusz Matt, Gebhard J. Głowacki, Eric D. Fromherz, Thomas Brabec, Christoph J. Scharber, Markus C. Sitter, Helmut Sariciftci, N. Serdar |
author_sort | Bednorz, Mateusz |
collection | PubMed |
description | The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D(∗) ≈ 7 × 10(7) Jones at 1.55 μm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts. |
format | Online Article Text |
id | pubmed-4130135 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Elsevier Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-41301352014-08-15 Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime Bednorz, Mateusz Matt, Gebhard J. Głowacki, Eric D. Fromherz, Thomas Brabec, Christoph J. Scharber, Markus C. Sitter, Helmut Sariciftci, N. Serdar Org Electron Article The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D(∗) ≈ 7 × 10(7) Jones at 1.55 μm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts. Elsevier Science 2013-05 /pmc/articles/PMC4130135/ /pubmed/25132811 http://dx.doi.org/10.1016/j.orgel.2013.02.009 Text en © 2013 Elsevier B.V. https://creativecommons.org/licenses/by-nc-nd/3.0/ Open Access under CC BY-NC-ND 3.0 (https://creativecommons.org/licenses/by-nc-nd/3.0/) license |
spellingShingle | Article Bednorz, Mateusz Matt, Gebhard J. Głowacki, Eric D. Fromherz, Thomas Brabec, Christoph J. Scharber, Markus C. Sitter, Helmut Sariciftci, N. Serdar Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title | Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title_full | Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title_fullStr | Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title_full_unstemmed | Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title_short | Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
title_sort | silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4130135/ https://www.ncbi.nlm.nih.gov/pubmed/25132811 http://dx.doi.org/10.1016/j.orgel.2013.02.009 |
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