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Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Hindawi Publishing Corporation
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4132316/ https://www.ncbi.nlm.nih.gov/pubmed/25147848 http://dx.doi.org/10.1155/2014/475423 |