Unipolar resistive switching of ZnO-single-wire memristors

Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The b...

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Detalles Bibliográficos
Autores principales: Huang, Yong, Luo, Ying, Shen, Zihan, Yuan, Guoliang, Zeng, Haibo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4136945/
https://www.ncbi.nlm.nih.gov/pubmed/25147487
http://dx.doi.org/10.1186/1556-276X-9-381
Descripción
Sumario:Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively.

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