Unipolar resistive switching of ZnO-single-wire memristors

Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The b...

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Detalles Bibliográficos
Autores principales: Huang, Yong, Luo, Ying, Shen, Zihan, Yuan, Guoliang, Zeng, Haibo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4136945/
https://www.ncbi.nlm.nih.gov/pubmed/25147487
http://dx.doi.org/10.1186/1556-276X-9-381
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author Huang, Yong
Luo, Ying
Shen, Zihan
Yuan, Guoliang
Zeng, Haibo
author_facet Huang, Yong
Luo, Ying
Shen, Zihan
Yuan, Guoliang
Zeng, Haibo
author_sort Huang, Yong
collection PubMed
description Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively.
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spelling pubmed-41369452014-08-21 Unipolar resistive switching of ZnO-single-wire memristors Huang, Yong Luo, Ying Shen, Zihan Yuan, Guoliang Zeng, Haibo Nanoscale Res Lett Nano Express Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 10(3). The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively. Springer 2014-08-07 /pmc/articles/PMC4136945/ /pubmed/25147487 http://dx.doi.org/10.1186/1556-276X-9-381 Text en Copyright © 2014 Huang et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Huang, Yong
Luo, Ying
Shen, Zihan
Yuan, Guoliang
Zeng, Haibo
Unipolar resistive switching of ZnO-single-wire memristors
title Unipolar resistive switching of ZnO-single-wire memristors
title_full Unipolar resistive switching of ZnO-single-wire memristors
title_fullStr Unipolar resistive switching of ZnO-single-wire memristors
title_full_unstemmed Unipolar resistive switching of ZnO-single-wire memristors
title_short Unipolar resistive switching of ZnO-single-wire memristors
title_sort unipolar resistive switching of zno-single-wire memristors
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4136945/
https://www.ncbi.nlm.nih.gov/pubmed/25147487
http://dx.doi.org/10.1186/1556-276X-9-381
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AT yuanguoliang unipolarresistiveswitchingofznosinglewirememristors
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