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Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films

The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structu...

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Detalles Bibliográficos
Autores principales: Puszkarski, H., Tomczak, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4147375/
https://www.ncbi.nlm.nih.gov/pubmed/25164617
http://dx.doi.org/10.1038/srep06135
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author Puszkarski, H.
Tomczak, P.
author_facet Puszkarski, H.
Tomczak, P.
author_sort Puszkarski, H.
collection PubMed
description The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper outlines the ground on which the controversy arose and shows why in different conditions a resonance sample may meet the assumptions of either the SI or the VI model.
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spelling pubmed-41473752014-09-02 Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films Puszkarski, H. Tomczak, P. Sci Rep Article The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper outlines the ground on which the controversy arose and shows why in different conditions a resonance sample may meet the assumptions of either the SI or the VI model. Nature Publishing Group 2014-08-28 /pmc/articles/PMC4147375/ /pubmed/25164617 http://dx.doi.org/10.1038/srep06135 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Puszkarski, H.
Tomczak, P.
Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title_full Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title_fullStr Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title_full_unstemmed Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title_short Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films
title_sort spin-wave resonance model of surface pinning in ferromagnetic semiconductor (ga,mn)as thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4147375/
https://www.ncbi.nlm.nih.gov/pubmed/25164617
http://dx.doi.org/10.1038/srep06135
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