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Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz
In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW T...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4148683/ https://www.ncbi.nlm.nih.gov/pubmed/25206316 http://dx.doi.org/10.1186/1556-276X-9-418 |