High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases...

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Detalles Bibliográficos
Autores principales: Lee, Ya-Ju, Yao, Yung-Chi, Huang, Chun-Ying, Lin, Tai-Yuan, Cheng, Li-Lien, Liu, Ching-Yun, Wang, Mei-Tan, Hwang, Jung-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4148684/
https://www.ncbi.nlm.nih.gov/pubmed/25206318
http://dx.doi.org/10.1186/1556-276X-9-433
Descripción
Sumario:In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

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