High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases...

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Autores principales: Lee, Ya-Ju, Yao, Yung-Chi, Huang, Chun-Ying, Lin, Tai-Yuan, Cheng, Li-Lien, Liu, Ching-Yun, Wang, Mei-Tan, Hwang, Jung-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4148684/
https://www.ncbi.nlm.nih.gov/pubmed/25206318
http://dx.doi.org/10.1186/1556-276X-9-433
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author Lee, Ya-Ju
Yao, Yung-Chi
Huang, Chun-Ying
Lin, Tai-Yuan
Cheng, Li-Lien
Liu, Ching-Yun
Wang, Mei-Tan
Hwang, Jung-Min
author_facet Lee, Ya-Ju
Yao, Yung-Chi
Huang, Chun-Ying
Lin, Tai-Yuan
Cheng, Li-Lien
Liu, Ching-Yun
Wang, Mei-Tan
Hwang, Jung-Min
author_sort Lee, Ya-Ju
collection PubMed
description In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.
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spelling pubmed-41486842014-09-09 High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers Lee, Ya-Ju Yao, Yung-Chi Huang, Chun-Ying Lin, Tai-Yuan Cheng, Li-Lien Liu, Ching-Yun Wang, Mei-Tan Hwang, Jung-Min Nanoscale Res Lett Nano Express In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed. Springer 2014-08-27 /pmc/articles/PMC4148684/ /pubmed/25206318 http://dx.doi.org/10.1186/1556-276X-9-433 Text en Copyright © 2014 Lee et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Lee, Ya-Ju
Yao, Yung-Chi
Huang, Chun-Ying
Lin, Tai-Yuan
Cheng, Li-Lien
Liu, Ching-Yun
Wang, Mei-Tan
Hwang, Jung-Min
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title_full High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title_fullStr High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title_full_unstemmed High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title_short High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
title_sort high breakdown voltage in algan/gan hemts using algan/gan/algan quantum-well electron-blocking layers
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4148684/
https://www.ncbi.nlm.nih.gov/pubmed/25206318
http://dx.doi.org/10.1186/1556-276X-9-433
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