ZnO-porous silicon nanocomposite for possible memristive device fabrication

Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size condit...

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Detalles Bibliográficos
Autores principales: Martínez, Lizeth, Ocampo, Oscar, Kumar, Yogesh, Agarwal, Vivechana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4150548/
https://www.ncbi.nlm.nih.gov/pubmed/25221461
http://dx.doi.org/10.1186/1556-276X-9-437
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author Martínez, Lizeth
Ocampo, Oscar
Kumar, Yogesh
Agarwal, Vivechana
author_facet Martínez, Lizeth
Ocampo, Oscar
Kumar, Yogesh
Agarwal, Vivechana
author_sort Martínez, Lizeth
collection PubMed
description Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.
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spelling pubmed-41505482014-09-12 ZnO-porous silicon nanocomposite for possible memristive device fabrication Martínez, Lizeth Ocampo, Oscar Kumar, Yogesh Agarwal, Vivechana Nanoscale Res Lett Nano Idea Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems. Springer 2014-08-27 /pmc/articles/PMC4150548/ /pubmed/25221461 http://dx.doi.org/10.1186/1556-276X-9-437 Text en Copyright © 2014 Martínez et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Idea
Martínez, Lizeth
Ocampo, Oscar
Kumar, Yogesh
Agarwal, Vivechana
ZnO-porous silicon nanocomposite for possible memristive device fabrication
title ZnO-porous silicon nanocomposite for possible memristive device fabrication
title_full ZnO-porous silicon nanocomposite for possible memristive device fabrication
title_fullStr ZnO-porous silicon nanocomposite for possible memristive device fabrication
title_full_unstemmed ZnO-porous silicon nanocomposite for possible memristive device fabrication
title_short ZnO-porous silicon nanocomposite for possible memristive device fabrication
title_sort zno-porous silicon nanocomposite for possible memristive device fabrication
topic Nano Idea
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4150548/
https://www.ncbi.nlm.nih.gov/pubmed/25221461
http://dx.doi.org/10.1186/1556-276X-9-437
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AT kumaryogesh znoporoussiliconnanocompositeforpossiblememristivedevicefabrication
AT agarwalvivechana znoporoussiliconnanocompositeforpossiblememristivedevicefabrication

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