Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

[Image: see text] By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an Ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is expl...

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Autores principales: Aspetti, Carlos O., Cho, Chang-Hee, Agarwal, Rahul, Agarwal, Ritesh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160267/
https://www.ncbi.nlm.nih.gov/pubmed/25120156
http://dx.doi.org/10.1021/nl502606q
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author Aspetti, Carlos O.
Cho, Chang-Hee
Agarwal, Rahul
Agarwal, Ritesh
author_facet Aspetti, Carlos O.
Cho, Chang-Hee
Agarwal, Rahul
Agarwal, Ritesh
author_sort Aspetti, Carlos O.
collection PubMed
description [Image: see text] By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an Ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process.
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spelling pubmed-41602672015-08-14 Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy Aspetti, Carlos O. Cho, Chang-Hee Agarwal, Rahul Agarwal, Ritesh Nano Lett [Image: see text] By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an Ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process. American Chemical Society 2014-08-14 2014-09-10 /pmc/articles/PMC4160267/ /pubmed/25120156 http://dx.doi.org/10.1021/nl502606q Text en Copyright © 2014 American Chemical Society Terms of Use (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html)
spellingShingle Aspetti, Carlos O.
Cho, Chang-Hee
Agarwal, Rahul
Agarwal, Ritesh
Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title_full Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title_fullStr Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title_full_unstemmed Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title_short Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
title_sort studies of hot photoluminescence in plasmonically coupled silicon via variable energy excitation and temperature-dependent spectroscopy
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160267/
https://www.ncbi.nlm.nih.gov/pubmed/25120156
http://dx.doi.org/10.1021/nl502606q
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