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Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer
Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO(2)/SiO(2)/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase th...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160324/ https://www.ncbi.nlm.nih.gov/pubmed/25246869 http://dx.doi.org/10.1186/1556-276X-9-464 |