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Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica

The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulatin...

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Detalles Bibliográficos
Autores principales: Xu, Lingbo, Li, Dongsheng, Jin, Lu, Xiang, Luelue, Wang, Feng, Yang, Deren, Que, Duanlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4164316/
https://www.ncbi.nlm.nih.gov/pubmed/25258597
http://dx.doi.org/10.1186/1556-276X-9-456
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author Xu, Lingbo
Li, Dongsheng
Jin, Lu
Xiang, Luelue
Wang, Feng
Yang, Deren
Que, Duanlin
author_facet Xu, Lingbo
Li, Dongsheng
Jin, Lu
Xiang, Luelue
Wang, Feng
Yang, Deren
Que, Duanlin
author_sort Xu, Lingbo
collection PubMed
description The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si NCs to LCs. Optimum Er(3+) PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists.
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spelling pubmed-41643162014-09-25 Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica Xu, Lingbo Li, Dongsheng Jin, Lu Xiang, Luelue Wang, Feng Yang, Deren Que, Duanlin Nanoscale Res Lett Nano Express The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si NCs to LCs. Optimum Er(3+) PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists. Springer 2014-09-02 /pmc/articles/PMC4164316/ /pubmed/25258597 http://dx.doi.org/10.1186/1556-276X-9-456 Text en Copyright © 2014 Xu et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Xu, Lingbo
Li, Dongsheng
Jin, Lu
Xiang, Luelue
Wang, Feng
Yang, Deren
Que, Duanlin
Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title_full Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title_fullStr Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title_full_unstemmed Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title_short Evolution of the sensitized Er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
title_sort evolution of the sensitized er(3+) emission by silicon nanoclusters and luminescence centers in silicon-rich silica
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4164316/
https://www.ncbi.nlm.nih.gov/pubmed/25258597
http://dx.doi.org/10.1186/1556-276X-9-456
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