Competitive growth mechanisms of AlN on Si (111) by MOVPE

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relax...

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Detalles Bibliográficos
Autores principales: Feng, Yuxia, Wei, Hongyuan, Yang, Shaoyan, Chen, Zhen, Wang, Lianshan, Kong, Susu, Zhao, Guijuan, Liu, Xianglin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4166946/
https://www.ncbi.nlm.nih.gov/pubmed/25231628
http://dx.doi.org/10.1038/srep06416
Descripción
Sumario:To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.

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