Competitive growth mechanisms of AlN on Si (111) by MOVPE

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relax...

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Autores principales: Feng, Yuxia, Wei, Hongyuan, Yang, Shaoyan, Chen, Zhen, Wang, Lianshan, Kong, Susu, Zhao, Guijuan, Liu, Xianglin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4166946/
https://www.ncbi.nlm.nih.gov/pubmed/25231628
http://dx.doi.org/10.1038/srep06416
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author Feng, Yuxia
Wei, Hongyuan
Yang, Shaoyan
Chen, Zhen
Wang, Lianshan
Kong, Susu
Zhao, Guijuan
Liu, Xianglin
author_facet Feng, Yuxia
Wei, Hongyuan
Yang, Shaoyan
Chen, Zhen
Wang, Lianshan
Kong, Susu
Zhao, Guijuan
Liu, Xianglin
author_sort Feng, Yuxia
collection PubMed
description To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.
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spelling pubmed-41669462014-09-24 Competitive growth mechanisms of AlN on Si (111) by MOVPE Feng, Yuxia Wei, Hongyuan Yang, Shaoyan Chen, Zhen Wang, Lianshan Kong, Susu Zhao, Guijuan Liu, Xianglin Sci Rep Article To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure. Nature Publishing Group 2014-09-18 /pmc/articles/PMC4166946/ /pubmed/25231628 http://dx.doi.org/10.1038/srep06416 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Feng, Yuxia
Wei, Hongyuan
Yang, Shaoyan
Chen, Zhen
Wang, Lianshan
Kong, Susu
Zhao, Guijuan
Liu, Xianglin
Competitive growth mechanisms of AlN on Si (111) by MOVPE
title Competitive growth mechanisms of AlN on Si (111) by MOVPE
title_full Competitive growth mechanisms of AlN on Si (111) by MOVPE
title_fullStr Competitive growth mechanisms of AlN on Si (111) by MOVPE
title_full_unstemmed Competitive growth mechanisms of AlN on Si (111) by MOVPE
title_short Competitive growth mechanisms of AlN on Si (111) by MOVPE
title_sort competitive growth mechanisms of aln on si (111) by movpe
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4166946/
https://www.ncbi.nlm.nih.gov/pubmed/25231628
http://dx.doi.org/10.1038/srep06416
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