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Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array

The reflectance of the controlled periodic Si nanowire (NW) arrays is systematically explored, which characterizes the influence on the solar energy harnessing ability by the geometries of the NW. A unique dependence of the reflectance of the Si NW array on the diameter, the height, and the bending...

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Detalles Bibliográficos
Autores principales: Wu, Zilong, Wang, Ziyi, Wang, Songyou, Zhong, Zhenyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4172400/
https://www.ncbi.nlm.nih.gov/pubmed/25258613
http://dx.doi.org/10.1186/1556-276X-9-495
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author Wu, Zilong
Wang, Ziyi
Wang, Songyou
Zhong, Zhenyang
author_facet Wu, Zilong
Wang, Ziyi
Wang, Songyou
Zhong, Zhenyang
author_sort Wu, Zilong
collection PubMed
description The reflectance of the controlled periodic Si nanowire (NW) arrays is systematically explored, which characterizes the influence on the solar energy harnessing ability by the geometries of the NW. A unique dependence of the reflectance of the Si NW array on the diameter, the height, and the bending of the NW are disclosed. The solar energy loss caused by the reflection of the Si NW array exhibits the minimum for the NW with intermediate diameter and length. A plane-wave-based transfer-matrix method (TMM) simulation is performed, which is well consistent with the experimental results. Our results demonstrate the design principle to optimize the Si NW arrays for high-efficiency solar cells. PACS: 81.07.-b; 78.67.-n; 81.16.-c
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spelling pubmed-41724002014-09-25 Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array Wu, Zilong Wang, Ziyi Wang, Songyou Zhong, Zhenyang Nanoscale Res Lett Nano Express The reflectance of the controlled periodic Si nanowire (NW) arrays is systematically explored, which characterizes the influence on the solar energy harnessing ability by the geometries of the NW. A unique dependence of the reflectance of the Si NW array on the diameter, the height, and the bending of the NW are disclosed. The solar energy loss caused by the reflection of the Si NW array exhibits the minimum for the NW with intermediate diameter and length. A plane-wave-based transfer-matrix method (TMM) simulation is performed, which is well consistent with the experimental results. Our results demonstrate the design principle to optimize the Si NW arrays for high-efficiency solar cells. PACS: 81.07.-b; 78.67.-n; 81.16.-c Springer 2014-09-15 /pmc/articles/PMC4172400/ /pubmed/25258613 http://dx.doi.org/10.1186/1556-276X-9-495 Text en Copyright © 2014 Wu et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Wu, Zilong
Wang, Ziyi
Wang, Songyou
Zhong, Zhenyang
Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title_full Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title_fullStr Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title_full_unstemmed Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title_short Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
title_sort substantial influence on solar energy harnessing ability by geometries of ordered si nanowire array
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4172400/
https://www.ncbi.nlm.nih.gov/pubmed/25258613
http://dx.doi.org/10.1186/1556-276X-9-495
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