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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex sit...

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Detalles Bibliográficos
Autores principales:	Lee, Chia-Yu, Tzou, An-Jye, Lin, Bing-Cheng, Lan, Yu-Pin, Chiu, Ching-Hsueh, Chi, Gou-Chung, Chen, Chi-Hsiang, Kuo, Hao-Chung, Lin, Ray-Ming, Chang, Chun-Yen
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4174280/ https://www.ncbi.nlm.nih.gov/pubmed/25258616 http://dx.doi.org/10.1186/1556-276X-9-505

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