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One-Dimensional Nanostructure Field-Effect Sensors for Gas Detection

Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostruc...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaoli, Cai, Bin, Tang, Qingxin, Tong, Yanhong, Liu, Yichun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4179014/
https://www.ncbi.nlm.nih.gov/pubmed/25090418
http://dx.doi.org/10.3390/s140813999
Descripción
Sumario:Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostructures provide a large surface area-volume ratio; which is an outstanding advantage for gas sensors with high sensitivity and fast response. In addition; the nature of the single crystals is favorable for the studies of the response mechanism. On the other hand; one main merit of the field-effect sensors is to provide an extra gate electrode to realize the current modulation; so that the sensitivity can be dramatically enhanced by changing the conductivity when operating the sensors in the subthreshold regime. This article reviews the recent developments in the field of 1D nanostructure FET for gas detection. The sensor configuration; the performance as well as their sensing mechanism are evaluated.