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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In(0.17)Al(0.83)N/GaN heterostructures

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to...

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Detalles Bibliográficos
Autores principales:	Wang, Jiaming, Xu, Fujun, Zhang, Xia, An, Wei, Li, Xin-Zheng, Song, Jie, Ge, Weikun, Tian, Guangshan, Lu, Jing, Wang, Xinqiang, Tang, Ning, Yang, Zhijian, Li, Wei, Wang, Weiying, Jin, Peng, Chen, Yonghai, Shen, Bo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2014
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4185379/ https://www.ncbi.nlm.nih.gov/pubmed/25283334 http://dx.doi.org/10.1038/srep06521

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