Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag e...

Descripción completa

Detalles Bibliográficos
Autores principales: Yan, Xiaobing, Hao, Hua, Chen, Yingfang, Shi, Shoushan, Zhang, Erpeng, Lou, Jianzhong, Liu, Baoting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4186951/
https://www.ncbi.nlm.nih.gov/pubmed/25294977
http://dx.doi.org/10.1186/1556-276X-9-548
_version_ 1782338135164715008
author Yan, Xiaobing
Hao, Hua
Chen, Yingfang
Shi, Shoushan
Zhang, Erpeng
Lou, Jianzhong
Liu, Baoting
author_facet Yan, Xiaobing
Hao, Hua
Chen, Yingfang
Shi, Shoushan
Zhang, Erpeng
Lou, Jianzhong
Liu, Baoting
author_sort Yan, Xiaobing
collection PubMed
description We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The reverse current at 1.2 V of LRS is strongly suppressed and more than three orders of magnitude lower than the forward current. The Schottky barrier height was calculated as approximately 0.32 eV, and the electron injection process and resistive switching mechanism were discussed.
format Online
Article
Text
id pubmed-4186951
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-41869512014-10-07 Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory Yan, Xiaobing Hao, Hua Chen, Yingfang Shi, Shoushan Zhang, Erpeng Lou, Jianzhong Liu, Baoting Nanoscale Res Lett Nano Express We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The reverse current at 1.2 V of LRS is strongly suppressed and more than three orders of magnitude lower than the forward current. The Schottky barrier height was calculated as approximately 0.32 eV, and the electron injection process and resistive switching mechanism were discussed. Springer 2014-10-02 /pmc/articles/PMC4186951/ /pubmed/25294977 http://dx.doi.org/10.1186/1556-276X-9-548 Text en Copyright © 2014 Yan et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Yan, Xiaobing
Hao, Hua
Chen, Yingfang
Shi, Shoushan
Zhang, Erpeng
Lou, Jianzhong
Liu, Baoting
Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title_full Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title_fullStr Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title_full_unstemmed Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title_short Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
title_sort self-rectifying performance in the sandwiched structure of ag/in-ga-zn-o/pt bipolar resistive switching memory
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4186951/
https://www.ncbi.nlm.nih.gov/pubmed/25294977
http://dx.doi.org/10.1186/1556-276X-9-548
work_keys_str_mv AT yanxiaobing selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT haohua selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT chenyingfang selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT shishoushan selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT zhangerpeng selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT loujianzhong selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory
AT liubaoting selfrectifyingperformanceinthesandwichedstructureofagingaznoptbipolarresistiveswitchingmemory

Ejemplares similares