Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag e...

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Detalles Bibliográficos
Autores principales: Yan, Xiaobing, Hao, Hua, Chen, Yingfang, Shi, Shoushan, Zhang, Erpeng, Lou, Jianzhong, Liu, Baoting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4186951/
https://www.ncbi.nlm.nih.gov/pubmed/25294977
http://dx.doi.org/10.1186/1556-276X-9-548

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4186951/
https://www.ncbi.nlm.nih.gov/pubmed/25294977
http://dx.doi.org/10.1186/1556-276X-9-548

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