Cargando…
Formation of Graphene Grain Boundaries on Cu(100) Surface and a Route Towards Their Elimination in Chemical Vapor Deposition Growth
Grain boundaries (GBs) in graphene prepared by chemical vapor deposition (CVD) greatly degrade the electrical and mechanical properties of graphene and thus hinder the applications of graphene in electronic devices. The seamless stitching of graphene flakes can avoid GBs, wherein the identical orien...
Autores principales: | Yuan, Qinghong, Song, Guangyao, Sun, Deyan, Ding, Feng |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4187007/ https://www.ncbi.nlm.nih.gov/pubmed/25286970 http://dx.doi.org/10.1038/srep06541 |
Ejemplares similares
-
Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth
por: Dong, Jichen, et al.
Publicado: (2017) -
Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
por: Chong, Laiyuan, et al.
Publicado: (2019) -
Introducing Overlapping Grain Boundaries in Chemical
Vapor Deposited Hexagonal Boron Nitride Monolayer Films
por: Bayer, Bernhard C., et al.
Publicado: (2017) -
Robust
Spin Interconnect with Isotropic Spin Dynamics
in Chemical Vapor Deposited Graphene Layers and Boundaries
por: Khokhriakov, Dmitrii, et al.
Publicado: (2020) -
Growth of Millimeter-Size Single Crystal Graphene on Cu Foils by Circumfluence Chemical Vapor Deposition
por: Wang, Chaocheng, et al.
Publicado: (2014)