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CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector

Detalles Bibliográficos
Autores principales: Bhat, Shwetha G., Kumar, P. S. Anil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4196221/
http://dx.doi.org/10.1038/srep06296
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author Bhat, Shwetha G.
Kumar, P. S. Anil
author_facet Bhat, Shwetha G.
Kumar, P. S. Anil
author_sort Bhat, Shwetha G.
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spelling pubmed-41962212014-10-21 CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector Bhat, Shwetha G. Kumar, P. S. Anil Sci Rep Corrigenda Nature Publishing Group 2014-10-14 /pmc/articles/PMC4196221/ http://dx.doi.org/10.1038/srep06296 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved
spellingShingle Corrigenda
Bhat, Shwetha G.
Kumar, P. S. Anil
CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title_full CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title_fullStr CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title_full_unstemmed CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title_short CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector
title_sort corrigendum: room temperature electrical spin injection into gaas by an oxide spin injector
topic Corrigenda
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4196221/
http://dx.doi.org/10.1038/srep06296
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AT kumarpsanil corrigendumroomtemperatureelectricalspininjectionintogaasbyanoxidespininjector